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P26B10SL-5071

P26B10SL-5071 SHINDENGEN


pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB9A71E94867580C7&compId=P26B10SL.pdf?ci_sign=706d8494412fff43342c204b64b1210f92d04d8b pVersion=0046&contRep=ZT&docId=005056AB90B41EDB839118EC4C6220C7&compId=_Shindengen%20Catalogue%202020.pdf?ci_sign=187763cd1f57da04a713ebf500a9ceff30383ffb Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Power dissipation: 44W
Polarisation: unipolar
On-state resistance: 30mΩ
Drain current: 26A
Drain-source voltage: 100V
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Gate charge: 43nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 78A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2172 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
122+0.59 EUR
136+0.53 EUR
155+0.46 EUR
164+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details P26B10SL-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W, Power dissipation: 44W, Polarisation: unipolar, On-state resistance: 30mΩ, Drain current: 26A, Drain-source voltage: 100V, Case: FB (TO252AA), Kind of package: reel; tape, Mounting: SMD, Gate charge: 43nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 78A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote P26B10SL-5071 nach Preis ab 0.42 EUR bis 0.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
P26B10SL-5071 P26B10SL-5071 Hersteller : SHINDENGEN pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB9A71E94867580C7&compId=P26B10SL.pdf?ci_sign=706d8494412fff43342c204b64b1210f92d04d8b pVersion=0046&contRep=ZT&docId=005056AB90B41EDB839118EC4C6220C7&compId=_Shindengen%20Catalogue%202020.pdf?ci_sign=187763cd1f57da04a713ebf500a9ceff30383ffb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Power dissipation: 44W
Polarisation: unipolar
On-state resistance: 30mΩ
Drain current: 26A
Drain-source voltage: 100V
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Gate charge: 43nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 78A
auf Bestellung 2172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
136+0.53 EUR
155+0.46 EUR
164+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH