
P26B10SL-5071 SHINDENGEN


Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Power dissipation: 44W
Polarisation: unipolar
On-state resistance: 30mΩ
Drain current: 26A
Drain-source voltage: 100V
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Gate charge: 43nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 78A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2172 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
136+ | 0.53 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
500+ | 0.42 EUR |
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Technische Details P26B10SL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W, Power dissipation: 44W, Polarisation: unipolar, On-state resistance: 30mΩ, Drain current: 26A, Drain-source voltage: 100V, Case: FB (TO252AA), Kind of package: reel; tape, Mounting: SMD, Gate charge: 43nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 78A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P26B10SL-5071 nach Preis ab 0.42 EUR bis 0.59 EUR
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P26B10SL-5071 | Hersteller : SHINDENGEN |
![]() ![]() Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W Power dissipation: 44W Polarisation: unipolar On-state resistance: 30mΩ Drain current: 26A Drain-source voltage: 100V Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Gate charge: 43nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 78A |
auf Bestellung 2172 Stücke: Lieferzeit 14-21 Tag (e) |
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