P26B10SN-5071 SHINDENGEN

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 35nC
On-state resistance: 28mΩ
Power dissipation: 44W
Drain current: 26A
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 100V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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Technische Details P26B10SN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W, Case: FB (TO252AA), Kind of package: reel; tape, Technology: EETMOS3, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Gate charge: 35nC, On-state resistance: 28mΩ, Power dissipation: 44W, Drain current: 26A, Gate-source voltage: ±20V, Pulsed drain current: 78A, Drain-source voltage: 100V, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
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P26B10SN-5071 | Hersteller : SHINDENGEN |
![]() Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 26A; Idm: 78A; 44W Case: FB (TO252AA) Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 35nC On-state resistance: 28mΩ Power dissipation: 44W Drain current: 26A Gate-source voltage: ±20V Pulsed drain current: 78A Drain-source voltage: 100V Polarisation: unipolar |
Produkt ist nicht verfügbar |