Technische Details P2N2907ARL1G ON
Description: TRANS PNP 60V 0.6A TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 625 mW.
Weitere Produktangebote P2N2907ARL1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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,TO-226_bentlead.jpg "P2N2907ARL1G") |
P2N2907ARL1G Produktcode: 53403 |
 Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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| P2N2907ARL1G | Hersteller : ON Semiconductor |
GP EPITAXIAL PLANAR SILICON TRANSISTOR |
Produkt ist nicht verfügbar |
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P2N2907ARL1G | Hersteller : ON Semiconductor |
GP EPITAXIAL PLANAR SILICON TRANSISTOR |
Produkt ist nicht verfügbar |
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P2N2907ARL1G | Hersteller : onsemi |
Description: TRANS PNP 60V 0.6A TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |