P30FE4SLK-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W
Case: FE (TO252AB similar)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Pulsed drain current: 90A
Power dissipation: 44W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W
Case: FE (TO252AB similar)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Pulsed drain current: 90A
Power dissipation: 44W
Gate charge: 44nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Anzahl je Verpackung: 1 Stücke
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Technische Details P30FE4SLK-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W, Case: FE (TO252AB similar), Kind of package: reel; tape, Mounting: SMD, Technology: EETMOS3, Pulsed drain current: 90A, Power dissipation: 44W, Gate charge: 44nC, Polarisation: unipolar, Drain current: 30A, Kind of channel: enhanced, Drain-source voltage: 40V, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P30FE4SLK-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
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P30FE4SLK-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 30A; Idm: 90A; 44W Case: FE (TO252AB similar) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Pulsed drain current: 90A Power dissipation: 44W Gate charge: 44nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8mΩ |
Produkt ist nicht verfügbar |