P40B10SN-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 56nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2993 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 102+ | 0.71 EUR |
| 115+ | 0.62 EUR |
| 117+ | 0.61 EUR |
| 122+ | 0.59 EUR |
| 128+ | 0.56 EUR |
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Technische Details P40B10SN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W, Case: FB (TO252AA), Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 40A, On-state resistance: 16.8mΩ, Type of transistor: N-MOSFET, Power dissipation: 62.5W, Polarisation: unipolar, Gate charge: 56nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 40A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P40B10SN-5071 nach Preis ab 0.56 EUR bis 1.1 EUR
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P40B10SN-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Drain-source voltage: 100V Drain current: 40A On-state resistance: 16.8mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Gate charge: 56nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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