P40B10SN-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 56nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 16.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Gate charge: 56nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
55+ | 1.3 EUR |
86+ | 0.84 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
500+ | 0.62 EUR |
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Technische Details P40B10SN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W, Case: FB (TO252AA), Kind of package: reel; tape, Mounting: SMD, Technology: EETMOS3, Drain-source voltage: 100V, Drain current: 40A, On-state resistance: 16.8mΩ, Type of transistor: N-MOSFET, Power dissipation: 62.5W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 40A, Gate charge: 56nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P40B10SN-5071 nach Preis ab 0.62 EUR bis 1.3 EUR
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P40B10SN-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 40A On-state resistance: 16.8mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Gate charge: 56nC |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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