P4SMA120CA

P4SMA120CA YANGJIE TECHNOLOGY


P4SMA_ser.pdf Hersteller: YANGJIE TECHNOLOGY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 120V; 2.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: bidirectional
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 102V
Max. forward impulse current: 2.4A
Breakdown voltage: 120V
auf Bestellung 4265 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
345+0.21 EUR
980+ 0.073 EUR
1090+ 0.066 EUR
1485+ 0.048 EUR
1570+ 0.046 EUR
Mindestbestellmenge: 345
Produktrezensionen
Produktbewertung abgeben

Technische Details P4SMA120CA YANGJIE TECHNOLOGY

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 400W; 120V; 2.4A; bidirectional; ±5%; SMA; reel,tape, Type of diode: TVS, Mounting: SMD, Tolerance: ±5%, Kind of package: reel; tape, Case: SMA, Semiconductor structure: bidirectional, Leakage current: 5µA, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 0.4kW, Max. off-state voltage: 102V, Max. forward impulse current: 2.4A, Breakdown voltage: 120V, Anzahl je Verpackung: 5 Stücke.

Weitere Produktangebote P4SMA120CA nach Preis ab 0.046 EUR bis 0.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
P4SMA120CA P4SMA120CA Hersteller : YANGJIE TECHNOLOGY P4SMA_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 120V; 2.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: bidirectional
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 102V
Max. forward impulse current: 2.4A
Breakdown voltage: 120V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4265 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
345+0.21 EUR
980+ 0.073 EUR
1090+ 0.066 EUR
1485+ 0.048 EUR
1570+ 0.046 EUR
Mindestbestellmenge: 345
P4SMA120CA P4SMA120CA Hersteller : LITTELFUSE P4SMA_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 120V; 2.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 102V
Max. forward impulse current: 2.5A
Breakdown voltage: 120V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P4SMA120CA P4SMA120CA Hersteller : Littelfuse littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf TVS Diode Single Bi-Dir 102V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
P4SMA120CA P4SMA120CA Hersteller : Taiwan Semiconductor Corporation Description: TVS DIODE 102VWM 165VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
P4SMA120CA P4SMA120CA Hersteller : Bourns p4sma-777697.pdf ESD Suppressors / TVS Diodes 120V 400W BiDir
Produkt ist nicht verfügbar
P4SMA120CA P4SMA120CA Hersteller : Littelfuse Littelfuse_TVS_Diode_P4SMA_Datasheet_pdf-540735.pdf ESD Suppressors / TVS Diodes 102V 400W 5% Bi-directional
Produkt ist nicht verfügbar
P4SMA120CA P4SMA120CA Hersteller : LITTELFUSE P4SMA_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 120V; 2.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: bidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 102V
Max. forward impulse current: 2.5A
Breakdown voltage: 120V
Produkt ist nicht verfügbar