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P50B4EA-5071 SHINDENGEN

_Shindengen Catalogue 2020.pdf
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W
Gate charge: 52nC
Polarisation: unipolar
Technology: EETMOS2
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 4.5mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 62.5W
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Technische Details P50B4EA-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 50A; Idm: 200A; 62.5W, Gate charge: 52nC, Polarisation: unipolar, Technology: EETMOS2, Drain current: 50A, Kind of channel: enhancement, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: FB (TO252AA), On-state resistance: 4.5mΩ, Mounting: SMD, Pulsed drain current: 200A, Power dissipation: 62.5W.