P50F10SN-5600 SHINDENGEN
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Case: FTO-220AG (SC91)
Mounting: THT
Kind of package: bulk
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 114nC
On-state resistance: 8.7mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 51W
Technology: EETMOS3
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| 50+ | 1.43 EUR |
| 57+ | 1.27 EUR |
| 100+ | 1.13 EUR |
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Technische Details P50F10SN-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W, Case: FTO-220AG (SC91), Mounting: THT, Kind of package: bulk, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 114nC, On-state resistance: 8.7mΩ, Gate-source voltage: ±20V, Drain current: 50A, Drain-source voltage: 100V, Pulsed drain current: 200A, Power dissipation: 51W, Technology: EETMOS3, Kind of channel: enhancement.
Weitere Produktangebote P50F10SN-5600 nach Preis ab 1.87 EUR bis 2.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| P50F10SN-5600 | Hersteller : Shindengen Electric Manufacturing Co. | P50F10SN-5600 |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
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| P50F10SN-5600 | Hersteller : Shindengen |
MOSFETs EETMOS series Power MOSFET Through Hole |
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