P50F10SN-5600 SHINDENGEN
Hersteller: SHINDENGENCategory: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 51W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 47+ | 1.54 EUR |
| 59+ | 1.23 EUR |
| 62+ | 1.16 EUR |
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Technische Details P50F10SN-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 50A, Pulsed drain current: 200A, Power dissipation: 51W, Case: FTO-220AG (SC91), Gate-source voltage: ±20V, On-state resistance: 8.7mΩ, Mounting: THT, Gate charge: 114nC, Kind of package: bulk, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P50F10SN-5600 nach Preis ab 1.16 EUR bis 1.86 EUR
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P50F10SN-5600 | Hersteller : SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 51W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: THT Gate charge: 114nC Kind of package: bulk Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 223 Stücke: Lieferzeit 7-14 Tag (e) |
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| P50F10SN-5600 | Hersteller : Shindengen Electric Manufacturing Co. | P50F10SN-5600 |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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