P600D/4 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 200V 6A 175C
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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Technische Details P600D/4 Vishay General Semiconductor - Diodes Division
Description: DIODE P600 200V 6A 175C, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Obsolete, Operating Temperature - Junction: -50°C ~ 150°C, Supplier Device Package: P600, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 150pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: P600, Axial, Packaging: Tape & Reel (TR).

