P60B6SN-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details P60B6SN-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 60A, Pulsed drain current: 180A, Power dissipation: 62.5W, Case: FB (TO252AA), Gate-source voltage: ±20V, On-state resistance: 6.7mΩ, Mounting: SMD, Gate charge: 55nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P60B6SN-5071
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| P60B6SN-5071 | Hersteller : Shindengen | MOSFET EETMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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| P60B6SN-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |