P6B40HP2-5071 SHINDENGEN

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Case: FB (TO252AA)
Kind of channel: enhancement
Technology: Hi-PotMOS2
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.05Ω
Drain current: 6A
Pulsed drain current: 24A
Gate-source voltage: ±30V
Power dissipation: 54W
Drain-source voltage: 400V
Anzahl je Verpackung: 1 Stücke
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Technische Details P6B40HP2-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W, Case: FB (TO252AA), Kind of channel: enhancement, Technology: Hi-PotMOS2, Type of transistor: N-MOSFET, Mounting: SMD, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 10nC, On-state resistance: 1.05Ω, Drain current: 6A, Pulsed drain current: 24A, Gate-source voltage: ±30V, Power dissipation: 54W, Drain-source voltage: 400V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P6B40HP2-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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P6B40HP2-5071 | Hersteller : Shindengen | MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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P6B40HP2-5071 | Hersteller : SHINDENGEN |
![]() Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Case: FB (TO252AA) Kind of channel: enhancement Technology: Hi-PotMOS2 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 10nC On-state resistance: 1.05Ω Drain current: 6A Pulsed drain current: 24A Gate-source voltage: ±30V Power dissipation: 54W Drain-source voltage: 400V |
Produkt ist nicht verfügbar |