Technische Details P6SMBJ33A-AU-R1 Panjit
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 33V, Breakdown voltage: 36.7...40.6V, Max. forward impulse current: 11.3A, Semiconductor structure: unidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Features of semiconductor devices: glass passivated, Kind of package: reel; tape, Manufacturer series: P6SMBJ, Application: automotive industry.
Weitere Produktangebote P6SMBJ33A-AU-R1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
P6SMBJ33A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| P6SMBJ33A-AU_R1_000A1 |
Hersteller: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH


