P6SMBJ40CA_R2_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 338+ | 0.21 EUR |
| 455+ | 0.16 EUR |
| 506+ | 0.14 EUR |
| 538+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.11 EUR |
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Technische Details P6SMBJ40CA_R2_00001 PanJit Semiconductor
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.3A; bidirectional; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 40V, Breakdown voltage: 44.4...49.1V, Max. forward impulse current: 9.3A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Manufacturer series: P6SMBJ, Features of semiconductor devices: glass passivated.
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