P8B10SB-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1857 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 163+ | 0.44 EUR |
| 180+ | 0.4 EUR |
| 226+ | 0.32 EUR |
| 239+ | 0.3 EUR |
| 3000+ | 0.29 EUR |
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Technische Details P8B10SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W, Case: FB (TO252AA), Kind of package: reel; tape, Mounting: SMD, Technology: EETMOS3, Drain-source voltage: 100V, Drain current: 8A, On-state resistance: 94mΩ, Type of transistor: N-MOSFET, Power dissipation: 20W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 24A, Gate charge: 16.5nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P8B10SB-5071 nach Preis ab 0.3 EUR bis 0.44 EUR
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P8B10SB-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Gate charge: 16.5nC |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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