P8B10SB-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Gate charge: 16.5nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
Mounting: SMD
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 214+ | 0.33 EUR |
| 245+ | 0.29 EUR |
| 259+ | 0.28 EUR |
| 500+ | 0.27 EUR |
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Technische Details P8B10SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W, Case: FB (TO252AA), Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 8A, On-state resistance: 94mΩ, Type of transistor: N-MOSFET, Power dissipation: 20W, Polarisation: unipolar, Gate charge: 16.5nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 24A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P8B10SB-5071 nach Preis ab 0.27 EUR bis 0.51 EUR
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P8B10SB-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Drain-source voltage: 100V Drain current: 8A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 24A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1857 Stücke: Lieferzeit 7-14 Tag (e) |
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| P8B10SB-5071 | Hersteller : Shindengen Electric Manufacturing Co. | P8B10SB-5071 |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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