P8B10SB-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Case: FB (TO252AA)
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 16.5nC
On-state resistance: 94mΩ
Power dissipation: 20W
Drain current: 8A
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 214+ | 0.33 EUR |
| 245+ | 0.29 EUR |
| 259+ | 0.28 EUR |
| 500+ | 0.27 EUR |
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Technische Details P8B10SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W, Case: FB (TO252AA), Kind of package: reel; tape, Technology: EETMOS3, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Gate charge: 16.5nC, On-state resistance: 94mΩ, Power dissipation: 20W, Drain current: 8A, Gate-source voltage: ±20V, Pulsed drain current: 24A, Drain-source voltage: 100V, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P8B10SB-5071 nach Preis ab 0.27 EUR bis 0.51 EUR
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P8B10SB-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W Case: FB (TO252AA) Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 16.5nC On-state resistance: 94mΩ Power dissipation: 20W Drain current: 8A Gate-source voltage: ±20V Pulsed drain current: 24A Drain-source voltage: 100V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1857 Stücke: Lieferzeit 7-14 Tag (e) |
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| P8B10SB-5071 | Hersteller : Shindengen Electric Manufacturing Co. | P8B10SB-5071 |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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