P8B10SB-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16.5nC
On-state resistance: 94mΩ
Drain current: 8A
Power dissipation: 20W
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 100V
Technology: EETMOS3
Kind of channel: enhancement
Case: FB (TO252AA)
Mounting: SMD
Type of transistor: N-MOSFET
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 214+ | 0.33 EUR |
| 243+ | 0.29 EUR |
| 500+ | 0.27 EUR |
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Technische Details P8B10SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 20W, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 16.5nC, On-state resistance: 94mΩ, Drain current: 8A, Power dissipation: 20W, Gate-source voltage: ±20V, Pulsed drain current: 24A, Drain-source voltage: 100V, Technology: EETMOS3, Kind of channel: enhancement, Case: FB (TO252AA), Mounting: SMD, Type of transistor: N-MOSFET.
Weitere Produktangebote P8B10SB-5071 nach Preis ab 0.44 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| P8B10SB-5071 | Hersteller : Shindengen Electric Manufacturing Co. | P8B10SB-5071 |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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