P90FG5R5SL-5071 SHINDENGEN

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 55V; 90A; Idm: 360A; 128W
Power dissipation: 128W
Polarisation: unipolar
On-state resistance: 3.8mΩ
Drain current: 90A
Drain-source voltage: 55V
Case: FG (TO263AB)
Kind of package: reel; tape
Mounting: SMD
Gate charge: 106nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 360A
Anzahl je Verpackung: 1 Stücke
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Technische Details P90FG5R5SL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 55V; 90A; Idm: 360A; 128W, Power dissipation: 128W, Polarisation: unipolar, On-state resistance: 3.8mΩ, Drain current: 90A, Drain-source voltage: 55V, Case: FG (TO263AB), Kind of package: reel; tape, Mounting: SMD, Gate charge: 106nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 360A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P90FG5R5SL-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
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P90FG5R5SL-5071 | Hersteller : Shindengen |
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P90FG5R5SL-5071 | Hersteller : SHINDENGEN |
![]() Description: Transistor: N-MOSFET; EETMOS3; unipolar; 55V; 90A; Idm: 360A; 128W Power dissipation: 128W Polarisation: unipolar On-state resistance: 3.8mΩ Drain current: 90A Drain-source voltage: 55V Case: FG (TO263AB) Kind of package: reel; tape Mounting: SMD Gate charge: 106nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 360A |
Produkt ist nicht verfügbar |