| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
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Technische Details PBHV8115T-QR Nexperia
Description: TRANS NPN 150V 1A TO-236AB, Qualification: AEC-Q101, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 1 A, Grade: Automotive, Supplier Device Package: TO-236AB, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBHV8115T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PBHV8115T-QR | Hersteller : Nexperia USA Inc. |
 Description: TRANS NPN 150V 1A TO-236ABQualification: AEC-Q101 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 1 A Grade: Automotive Supplier Device Package: TO-236AB Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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