PBHV8115Z-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBHV8115Z-Q/SOT223/SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 60mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 700 mW
Description: PBHV8115Z-Q/SOT223/SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 60mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 700 mW
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Technische Details PBHV8115Z-QX Nexperia USA Inc.
Description: PBHV8115Z-Q/SOT223/SC-73, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 60mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V, Frequency - Transition: 30MHz, Supplier Device Package: SOT-223, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 700 mW.
Weitere Produktangebote PBHV8115Z-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| PBHV8115Z-QX | Hersteller : Nexperia USA Inc. |
Description: PBHV8115Z-Q/SOT223/SC-73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 60mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V Frequency - Transition: 30MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 700 mW |
Produkt ist nicht verfügbar |
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PBHV8115Z-QX | Hersteller : Nexperia |
 Bipolar Transistors - BJT PBHV8115Z-Q/SOT223/SC-73 |
Produkt ist nicht verfügbar |