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PBHV9040T-QR

PBHV9040T-QR Nexperia


PBHV9040T-Q.pdf Hersteller: Nexperia
Bipolar Transistors - BJT 500 V, 0.25 A PNP high-voltage low VCEsat transistor
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Technische Details PBHV9040T-QR Nexperia

Description: PBHV9040T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Frequency - Transition: 55MHz, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 250 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 300 mW.

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PBHV9040T-QR Hersteller : Nexperia USA Inc. PBHV9040T-Q.pdf Description: PBHV9040T-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 300 mW
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