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PBHV9115T-QR

PBHV9115T-QR Nexperia

PBHV9115T-Q.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT23 150V 1A PNP HI VOLT
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10+0.6 EUR
100+0.39 EUR
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Technische Details PBHV9115T-QR Nexperia

Description: PBHV9115T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V, Frequency - Transition: 115MHz, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 300 mW, Qualification: AEC-Q101.

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PBHV9115T-QR PBHV9115T-QR Hersteller : Nexperia USA Inc. PBHV9115T-Q.pdf Description: PBHV9115T-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Frequency - Transition: 115MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
Qualification: AEC-Q101
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