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PBRN123ET,215

PBRN123ET,215 Nexperia USA Inc.


PBRN123ET.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 40V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.099 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PBRN123ET,215 Nexperia USA Inc.

Description: TRANS PREBIAS NPN 40V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote PBRN123ET,215 nach Preis ab 0.086 EUR bis 0.65 EUR

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PBRN123ET,215 PBRN123ET,215 Hersteller : Nexperia USA Inc. PBRN123ET.pdf Description: TRANS PREBIAS NPN 40V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
auf Bestellung 4884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
61+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
PBRN123ET,215 PBRN123ET,215 Hersteller : Nexperia PBRN123ET-2937890.pdf Bipolar Transistors - Pre-Biased PBRN123ET/SOT23/TO-236AB
auf Bestellung 8779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.65 EUR
10+0.54 EUR
100+0.29 EUR
500+0.19 EUR
1000+0.13 EUR
3000+0.1 EUR
9000+0.086 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH