PBSS306NZ-QF Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 100V 5.1A SOT-223
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5.1 A
Grade: Automotive
Supplier Device Package: SOT-223
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 255mA, 5.1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS306NZ-QF Nexperia USA Inc.
Description: TRANS NPN 100V 5.1A SOT-223, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Power - Max: 700 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 5.1 A, Grade: Automotive, Supplier Device Package: SOT-223, Frequency - Transition: 110MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 255mA, 5.1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN.
Weitere Produktangebote PBSS306NZ-QF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PBSS306NZ-QF | Hersteller : Nexperia |
Bipolar Transistors - BJT 100 V, 5.1 A NPN low VCEsat transistor |
Produkt ist nicht verfügbar |