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PBSS306NZ-QF

PBSS306NZ-QF Nexperia USA Inc.


PBSS306NZ.pdf Hersteller: Nexperia USA Inc.
Description: TRANS NPN 100V 5.1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 255mA, 5.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223
Grade: Automotive
Current - Collector (Ic) (Max): 5.1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 700 mW
Qualification: AEC-Q101
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Technische Details PBSS306NZ-QF Nexperia USA Inc.

Description: TRANS NPN 100V 5.1A SOT-223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 255mA, 5.1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 110MHz, Supplier Device Package: SOT-223, Grade: Automotive, Current - Collector (Ic) (Max): 5.1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 700 mW, Qualification: AEC-Q101.

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PBSS306NZ-QF PBSS306NZ-QF Hersteller : Nexperia PBSS306NZ.pdf Bipolar Transistors - BJT 100 V, 5.1 A NPN low VCEsat transistor
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