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PBSS4032SN,115

PBSS4032SN,115 Nexperia


PBSS4032SN-1599413.pdf Hersteller: Nexperia
Bipolar Transistors - BJT Dual NPN 30V 5.7A 0.73W 140MHz
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Technische Details PBSS4032SN,115 Nexperia

Description: TRANS 2NPN DUAL 30V 5.7A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 2.3W, Current - Collector (Ic) (Max): 5.7A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: 8-SO, Part Status: Obsolete.

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PBSS4032SN,115 PBSS4032SN,115 Hersteller : Nexperia pbss4032sn.pdf Trans GP BJT NPN 30V 5.7A 2300mW 8-Pin SO T/R
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PBSS4032SN,115 PBSS4032SN,115 Hersteller : Nexperia USA Inc. PBSS4032SN.pdf Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH