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PBSS4130QAZ

PBSS4130QAZ Nexperia USA Inc.


PBSS4130QA.pdf Hersteller: Nexperia USA Inc.
Description: TRANS NPN 30V 1A DFN1010D-3
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
Qualification: AEC-Q100
auf Bestellung 292002 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3414+0.14 EUR
Mindestbestellmenge: 3414
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PBSS4130QAZ Nexperia USA Inc.

Description: TRANS NPN 30V 1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 190MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 325 mW, Qualification: AEC-Q100.

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PBSS4130QAZ PBSS4130QAZ Hersteller : NXP Semiconductors NEXP-S-A0003560291-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 1A DFN1010D-3
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN1010D-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
auf Bestellung 243300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3414+0.14 EUR
Mindestbestellmenge: 3414
Im Einkaufswagen  Stück im Wert von  UAH
PBSS4130QAZ PBSS4130QAZ Hersteller : Nexperia 805977620212382pbss4130qa.pdf Trans GP BJT NPN 30V 1A 325mW Automotive AEC-Q101 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS4130QAZ PBSS4130QAZ Hersteller : Nexperia USA Inc. PBSS4130QA.pdf Description: TRANS NPN 30V 1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS4130QAZ PBSS4130QAZ Hersteller : Nexperia USA Inc. PBSS4130QA.pdf Description: TRANS NPN 30V 1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 325 mW
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS4130QAZ PBSS4130QAZ Hersteller : Nexperia PBSS4130QA.pdf NEXP-S-A0003560291-1.pdf?t.download=true&u=5oefqw Bipolar Transistors - BJT 30 V; 1 A NPN low VCEsat (BISS) transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH