auf Bestellung 2908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.26 EUR |
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Technische Details PBSS4160PANP-QX Nexperia
Description: PBSS4160PANP-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A / 340mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V / 170 @ 100mA, 2V, Frequency - Transition: 175MHz, 125MHz, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4160PANP-QX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PBSS4160PANP-QX | Hersteller : Nexperia USA Inc. |
Description: PBSS4160PANP-Q/SOT1118/HUSON6 Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A / 340mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V / 170 @ 100mA, 2V Frequency - Transition: 175MHz, 125MHz Supplier Device Package: 6-HUSON (2x2) Grade: Automotive Qualification: AEC-Q101 |
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