| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.41 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
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Technische Details PBSS4160T-QR Nexperia
Description: PBSS4160T-Q/SOT23/TO-236AB, Grade: Automotive, Qualification: AEC-Q101, Power - Max: 270 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 900 mA, Part Status: Active, Supplier Device Package: TO-236AB, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS4160T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBSS4160T-QR | Hersteller : Nexperia USA Inc. |
 Description: PBSS4160T-Q/SOT23/TO-236ABGrade: Automotive Qualification: AEC-Q101 Power - Max: 270 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 900 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 220MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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