auf Bestellung 1878 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 704+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS4260PANSX Nexperia
Description: TRANS 2NPN 60V 2A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: DFN2020D-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4260PANSX nach Preis ab 0.22 EUR bis 1.38 EUR
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PBSS4260PANSX | Hersteller : Nexperia |
 Trans GP BJT NPN 60V 2A 960mW 6-Pin DFN-D EP T/R |
auf Bestellung 1878 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4260PANSX | Hersteller : Nexperia |
60 V, 2 A NPN/NPN Low Vcesat (Biss) Double Transistor Automotive AEC-Q101 |
auf Bestellung 2136000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS4260PANSX | Hersteller : Nexperia USA Inc. |
Description: TRANS 2NPN 60V 2A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: DFN2020D-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PBSS4260PANSX | Hersteller : Nexperia |
Bipolar Transistors - BJT PBSS4260PANS/SOT1118/HUSON6 |
auf Bestellung 2534 Stücke: Lieferzeit 14-28 Tag (e) |
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PBSS4260PANSX | Hersteller : Nexperia USA Inc. |
Description: TRANS 2NPN 60V 2A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: DFN2020D-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PBSS4260PANSX | Hersteller : Nexperia |
Trans GP BJT NPN 60V 2A 960mW 6-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PBSS4260PANSX | Hersteller : Nexperia |
Trans GP BJT NPN 60V 2A 960mW 6-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PBSS4260PANSX | Hersteller : NEXPERIA |
60 V, 2 A NPN/NPN Low Vcesat (Biss) Double Transistor |
Produkt ist nicht verfügbar |