PBSS4350T-QR NEXPERIA
Hersteller: NEXPERIACategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT23; TO236AB
Pulsed collector current: 5A
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2930 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 205+ | 0.35 EUR |
| 274+ | 0.26 EUR |
| 550+ | 0.13 EUR |
| 582+ | 0.12 EUR |
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Technische Details PBSS4350T-QR NEXPERIA
Description: TRANS NPN 50V 2A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.2 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4350T-QR nach Preis ab 0.12 EUR bis 0.53 EUR
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PBSS4350T-QR | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 1.2W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 1.2W Case: SOT23; TO236AB Pulsed collector current: 5A Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz |
auf Bestellung 2930 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS4350T-QR | Hersteller : NEXPERIA |
Trans GP BJT NPN 50V 2A 1200mW 3-Pin SOT-23 |
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PBSS4350T-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 50V 2A TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PBSS4350T-QR | Hersteller : Nexperia |
Bipolar Transistors - BJT PBSS4350T-Q/SOT23/TO-236AB |
Produkt ist nicht verfügbar |