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PBSS5160PAP,115

PBSS5160PAP,115 Nexperia


PBSS5160PAP.pdf Hersteller: Nexperia
Bipolar Transistors - BJT PBSS5160PAP/SOT1118/HUSON6
auf Bestellung 3077 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.29 EUR
10+0.82 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.33 EUR
6000+0.30 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PBSS5160PAP,115 Nexperia

Description: TRANS 2PNP 60V 1A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Part Status: Active, Qualification: AEC-Q100.

Weitere Produktangebote PBSS5160PAP,115 nach Preis ab 0.54 EUR bis 1.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PBSS5160PAP,115 PBSS5160PAP,115 Hersteller : Nexperia USA Inc. PBSS5160PAP.pdf Description: TRANS 2PNP 60V 1A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5160PAP,115 PBSS5160PAP,115 Hersteller : NEXPERIA 805808525247128pbss5160pap.pdf Trans GP BJT PNP 60V 1A 2000mW Automotive 6-Pin HUSON EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5160PAP,115 PBSS5160PAP,115 Hersteller : Nexperia USA Inc. PBSS5160PAP.pdf Description: TRANS 2PNP 60V 1A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH