PBSS5160QAZ NXP Semiconductors
Hersteller: NXP Semiconductors
Trans GP BJT PNP 60V 1A 1000mW 3-Pin DFN-D EP T/R Automotive AEC-Q101
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Technische Details PBSS5160QAZ NXP Semiconductors
Description: TRANS PNP 60V 1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V, Frequency - Transition: 150MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 325 mW, Qualification: AEC-Q100.
Weitere Produktangebote PBSS5160QAZ nach Preis ab 0.15 EUR bis 0.8 EUR
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PBSS5160QAZ | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A DFN1010D-3 Qualification: AEC-Q100 Grade: Automotive Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Power - Max: 325 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: DFN1010D-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP |
auf Bestellung 4855 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5160QAZ | Nexperia |
Bipolar Transistors - BJT PBSS5160QA/SOT1215/DFN1010D-3 |
auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS5160QAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A DFN1010D-3
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: DFN1010D-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Description: TRANS PNP 60V 1A DFN1010D-3
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: DFN1010D-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 4855 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| PBSS5160QAZ |
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Hersteller: Nexperia
Bipolar Transistors - BJT PBSS5160QA/SOT1215/DFN1010D-3
Bipolar Transistors - BJT PBSS5160QA/SOT1215/DFN1010D-3
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.16 EUR |
| 5000+ | 0.15 EUR |