PBSS5160T-QR Nexperia
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9524+ | 0.06 EUR |
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Technische Details PBSS5160T-QR Nexperia
Description: PBSS5160T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Frequency - Transition: 220MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 900 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 270 mW.
Weitere Produktangebote PBSS5160T-QR nach Preis ab 0.06 EUR bis 0.64 EUR
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PBSS5160T-QR | Hersteller : Nexperia |
 Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23 Automotive AEC-Q101 |
auf Bestellung 16938 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5160T-QR | Hersteller : Nexperia | Bipolar Transistors - BJT PBSS5160T-Q/SOT23/TO-236AB |
auf Bestellung 8075 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5160T-QR | Hersteller : Nexperia |
Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23 Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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PBSS5160T-QR | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Case: SOT23; TO236AB Current gain: 100...400 Mounting: SMD Kind of package: 7 inch reel; tape Application: automotive industry Power dissipation: 1.25W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PBSS5160T-QR | Hersteller : NEXPERIA |
Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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PBSS5160T-QR | Hersteller : Nexperia USA Inc. |
Description: PBSS5160T-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 220MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 900 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 270 mW |
Produkt ist nicht verfügbar |
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PBSS5160T-QR | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Case: SOT23; TO236AB Current gain: 100...400 Mounting: SMD Kind of package: 7 inch reel; tape Application: automotive industry Power dissipation: 1.25W |
Produkt ist nicht verfügbar |