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PBSS5160T-QR

PBSS5160T-QR Nexperia USA Inc.


PBSS5160T-Q.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2968 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
103+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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Technische Details PBSS5160T-QR Nexperia USA Inc.

Description: TRANS PNP 60V 0.9A TO-236AB, Power - Max: 270 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 900 mA, Supplier Device Package: TO-236AB, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

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PBSS5160T-QR PBSS5160T-QR Hersteller : Nexperia PBSS5160T-Q.pdf Bipolar Transistors - BJT The factory is currently not accepting orders for this product.
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.55 EUR
10+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.095 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5160T-QR PBSS5160T-QR Hersteller : Nexperia USA Inc. PBSS5160T-Q.pdf Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PBSS5160T-QR PBSS5160T-QR Hersteller : NEXPERIA PBSS5160T-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 100...400
Application: automotive industry
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH