Technische Details PBSS5160T-QR Nexperia
Description: TRANS PNP 60V 0.9A TO-236AB, Power - Max: 270 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 900 mA, Supplier Device Package: TO-236AB, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS5160T-QR nach Preis ab 0.069 EUR bis 0.7 EUR
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PBSS5160T-QR | Nexperia |
 Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23 Automotive AEC-Q101 |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5160T-QR | Nexperia USA Inc. |
Description: TRANS PNP 60V 0.9A TO-236AB Power - Max: 270 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 900 mA Supplier Device Package: TO-236AB Frequency - Transition: 220MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2968 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5160T-QR | Nexperia |
Bipolar Transistors - BJT PBSS5160T-Q/SOT23/TO-236AB |
auf Bestellung 5470 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS5160T-QR |
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Hersteller: Nexperia
Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23 Automotive AEC-Q101
Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23 Automotive AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9524+ | 0.069 EUR |
| PBSS5160T-QR |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 65+ | 0.32 EUR |
| 103+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| PBSS5160T-QR |
|
Hersteller: Nexperia
Bipolar Transistors - BJT PBSS5160T-Q/SOT23/TO-236AB
Bipolar Transistors - BJT PBSS5160T-Q/SOT23/TO-236AB
auf Bestellung 5470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |