PBSS5160T-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.9A TO-236AB
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 65+ | 0.27 EUR |
| 103+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS5160T-QR Nexperia USA Inc.
Description: TRANS PNP 60V 0.9A TO-236AB, Power - Max: 270 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 900 mA, Supplier Device Package: TO-236AB, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS5160T-QR nach Preis ab 0.095 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PBSS5160T-QR | Hersteller : Nexperia |
Bipolar Transistors - BJT The factory is currently not accepting orders for this product. |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
PBSS5160T-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 60V 0.9A TO-236ABPower - Max: 270 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 900 mA Supplier Device Package: TO-236AB Frequency - Transition: 220MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|||||||||||||||
|
PBSS5160T-QR | Hersteller : NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: PNP Power dissipation: 1.25W Collector current: 1A Collector-emitter voltage: 60V Current gain: 100...400 Application: automotive industry Polarisation: bipolar |
Produkt ist nicht verfügbar |

