Technische Details PBSS5160T-QVL Nexperia
Description: PBSS5160T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Frequency - Transition: 220MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 900 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 270 mW.
Weitere Produktangebote PBSS5160T-QVL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PBSS5160T-QVL | Hersteller : NEXPERIA | PBSS5160T-Q/SOT23/TO-236AB |
Produkt ist nicht verfügbar |
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| PBSS5160T-QVL | Hersteller : Nexperia USA Inc. |
Description: PBSS5160T-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 220MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 900 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 270 mW |
Produkt ist nicht verfügbar |
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PBSS5160T-QVL | Hersteller : Nexperia |
 Bipolar Transistors - BJT PBSS5160T-Q/SOT23/TO-236AB |
Produkt ist nicht verfügbar |