PBSS5160T-QVL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PBSS5160T-Q/SOT23/TO-236AB
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 270 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 900 mA
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Technische Details PBSS5160T-QVL Nexperia USA Inc.
Description: PBSS5160T-Q/SOT23/TO-236AB, Part Status: Active, Supplier Device Package: TO-236AB, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power - Max: 270 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 900 mA.
Weitere Produktangebote PBSS5160T-QVL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PBSS5160T-QVL | Hersteller : Nexperia | Bipolar Transistors - BJT SOT23 60V 1A PNP TRANS |
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