PBSS5230PAP,115 Nexperia
auf Bestellung 1290 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 843+ | 0.65 EUR |
| 1000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS5230PAP,115 Nexperia
Description: TRANS 2PNP 30V 2A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 420mv @ 100mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V, Frequency - Transition: 95MHz, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PBSS5230PAP,115 nach Preis ab 0.4 EUR bis 1.41 EUR
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PBSS5230PAP,115 | Hersteller : Nexperia |
 Trans GP BJT PNP 30V 2A 2000mW 6-Pin HUSON EP T/R Automotive AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5230PAP,115 | Hersteller : Nexperia |
Trans GP BJT PNP 30V 2A 2000mW 6-Pin HUSON EP T/R Automotive AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5230PAP,115 | Hersteller : Nexperia |
Bipolar Transistors - BJT TRANS-SS PNP/PNP SOT1118 30V |
auf Bestellung 2976 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5230PAP,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP 30V 2A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 510mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 420mv @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 95MHz Supplier Device Package: 6-HUSON (2x2) Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS5230PAP,115 | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 30V 2A 200mW Automotive 6-Pin HUSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5230PAP,115 | Hersteller : NEXPERIA |
Trans GP BJT PNP 30V 2A 200mW Automotive 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PBSS5230PAP,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP 30V 2A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 510mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 420mv @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 95MHz Supplier Device Package: 6-HUSON (2x2) Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |