PBSS5230QAZ Nexperia
auf Bestellung 79735 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5737+ | 0.096 EUR |
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Technische Details PBSS5230QAZ Nexperia
Description: TRANS PNP 30V 2A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Frequency - Transition: 170MHz, Supplier Device Package: DFN1010D-3, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 325 mW.
Weitere Produktangebote PBSS5230QAZ nach Preis ab 0.079 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PBSS5230QAZ | Hersteller : NXP Semiconductors |
 Description: TRANS PNP 30V 2A DFN1010D-3Packaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
auf Bestellung 554308 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5230QAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 30V 2A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5230QAZ | Hersteller : Nexperia |
Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi |
auf Bestellung 4740 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS5230QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 30V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS5230QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 30V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 125000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS5230QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 30V 2A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 234308 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5230QAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 30V 2A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Frequency - Transition: 170MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 325 mW |
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