PBSS5250TH-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB
Qualification: AEC-Q101
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details PBSS5250TH-QR Nexperia USA Inc.
Description: TRANS PNP 50V 2A TO-236AB, Qualification: AEC-Q101, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Grade: Automotive, Supplier Device Package: TO-236AB, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Operating Temperature: 175°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS5250TH-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PBSS5250TH-QR | Hersteller : Nexperia |
Bipolar Transistors - BJT PBSS5250TH-Q/SOT23/TO-236AB |
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