PBSS5260QAZ Nexperia
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4778+ | 0.12 EUR |
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Technische Details PBSS5260QAZ Nexperia
Description: TRANS PNP 60V 1.7A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V, Frequency - Transition: 150MHz, Supplier Device Package: DFN1010D-3, Part Status: Active, Current - Collector (Ic) (Max): 1.7 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 325 mW, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote PBSS5260QAZ nach Preis ab 0.12 EUR bis 0.83 EUR
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PBSS5260QAZ | Hersteller : Nexperia |
 Trans GP BJT PNP 60V 1.7A 1000mW Automotive AEC-Q101 3-Pin DFN-D EP T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5260QAZ | Hersteller : Nexperia |
Bipolar Transistors - BJT PBSS5260QA/SOT1215/DFN1010D-3 |
auf Bestellung 3822 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5260QAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 60V 1.7A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V Frequency - Transition: 150MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1.7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Qualification: AEC-Q100 |
auf Bestellung 2697 Stücke: Lieferzeit 10-14 Tag (e) |
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| PBSS5260QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 60V 1.7A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS5260QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 60V 1.7A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 205000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS5260QAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 60V 1.7A 1000mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 55000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PBSS5260QAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS5260QAZ - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 110000 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5260QAZ | Hersteller : Nexperia |
Trans GP BJT PNP 60V 1.7A 1000mW Automotive AEC-Q101 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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PBSS5260QAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 60V 1.7A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V Frequency - Transition: 150MHz Supplier Device Package: DFN1010D-3 Part Status: Active Current - Collector (Ic) (Max): 1.7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 325 mW Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |