PBSS5630PA,115 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: NEXPERIA PBSS5630PA - SMALL SIGN
Packaging: Bulk
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.1 W
Description: NEXPERIA PBSS5630PA - SMALL SIGN
Packaging: Bulk
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.1 W
auf Bestellung 1582394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2323+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS5630PA,115 NXP Semiconductors
Description: TRANS PNP 30V 6A 3HUSON, Packaging: Tape & Reel (TR), Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V, Frequency - Transition: 80MHz, Supplier Device Package: 3-HUSON (2x2), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 2.1 W.
Weitere Produktangebote PBSS5630PA,115 nach Preis ab 0.34 EUR bis 0.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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PBSS5630PA,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 30V 6A 3HUSON Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V Frequency - Transition: 80MHz Supplier Device Package: 3-HUSON (2x2) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 2.1 W |
auf Bestellung 619 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5630PA,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS5630PA,115 - Bipolarer Einzeltransistor (BJT), PNP, 30 V, 6 A, 500 mW, HUSON, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 110hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 6A usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 30V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 7370 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5630PA,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PBSS5630PA,115 - Bipolarer Einzeltransistor (BJT), PNP, 30 V, 6 A, 500 mW, HUSON, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 110hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 6A usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 30V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 80MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 7370 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5630PA,115 | Hersteller : NEXPERIA | Trans GP BJT PNP 30V 6A 2100mW 3-Pin HUSON T/R |
Produkt ist nicht verfügbar |
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PBSS5630PA,115 | Hersteller : Nexperia | Trans GP BJT PNP 30V 6A 2100mW 3-Pin HUSON T/R |
Produkt ist nicht verfügbar |
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PBSS5630PA,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 30V 6A 3HUSON Packaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V Frequency - Transition: 80MHz Supplier Device Package: 3-HUSON (2x2) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 2.1 W |
Produkt ist nicht verfügbar |
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PBSS5630PA,115 | Hersteller : Nexperia | Bipolar Transistors - BJT PBSS5630PA/SOT1061/HUSON3 |
Produkt ist nicht verfügbar |