| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
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Technische Details PBSS8110T-QR Nexperia
Description: TRANS NPN 100V 1A TO-236AB, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS8110T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PBSS8110T-QR | Hersteller : Nexperia USA Inc. |
 Description: TRANS NPN 100V 1A TO-236ABPower - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-236AB Qualification: AEC-Q101 Grade: Automotive Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| PBSS8110T-QR | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Type of transistor: NPN Mounting: SMD Case: SOT23; TO236AB Power dissipation: 0.48W Collector current: 1A Collector-emitter voltage: 100V Frequency: 100MHz Kind of package: 7 inch reel; tape Application: automotive industry Polarisation: bipolar |
Produkt ist nicht verfügbar |