PBSS8110T-QR Nexperia
auf Bestellung 9703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.81 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.16 EUR |
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Technische Details PBSS8110T-QR Nexperia
Description: TRANS NPN 100V 1A TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 300 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS8110T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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PBSS8110T-QR | Hersteller : NEXPERIA |
 Trans GP BJT NPN 100V 1A 480mW 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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PBSS8110T-QR | Hersteller : Nexperia |
Trans GP BJT NPN 100V 1A 480mW 3-Pin SOT-23 Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| PBSS8110T-QR | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Mounting: SMD Application: automotive industry Power dissipation: 0.48W Polarisation: bipolar Case: SOT23; TO236AB Kind of package: 7 inch reel; tape Frequency: 100MHz Collector-emitter voltage: 100V Collector current: 1A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PBSS8110T-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 100V 1A TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
| PBSS8110T-QR | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Mounting: SMD Application: automotive industry Power dissipation: 0.48W Polarisation: bipolar Case: SOT23; TO236AB Kind of package: 7 inch reel; tape Frequency: 100MHz Collector-emitter voltage: 100V Collector current: 1A Type of transistor: NPN |
Produkt ist nicht verfügbar |