PBSS8110T-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO-236AB
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details PBSS8110T-QR Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO-236AB, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS8110T-QR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PBSS8110T-QR | Nexperia |
Bipolar Transistors - BJT SOT23 100V 1A NPN BJT |
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Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PBSS8110T-QR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.48W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PBSS8110T-QR |
|
Hersteller: Nexperia
Bipolar Transistors - BJT SOT23 100V 1A NPN BJT
Bipolar Transistors - BJT SOT23 100V 1A NPN BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PBSS8110T-QR |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH