PBSS8110T-QVL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details PBSS8110T-QVL Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-236AB, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PBSS8110T-QVL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PBSS8110T-QVL | Nexperia |
Bipolar Transistors - BJT SOT23 100V 1A NPN BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PBSS8110T-QVL |
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Hersteller: Nexperia
Bipolar Transistors - BJT SOT23 100V 1A NPN BJT
Bipolar Transistors - BJT SOT23 100V 1A NPN BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH