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PCDB1065G1_R2_00001

PCDB1065G1_R2_00001 Panjit International Inc.


PCDB1065G1.pdf Hersteller: Panjit International Inc.
Description: DIODE SIL CARBIDE 650V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.93 EUR
1600+2.89 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PCDB1065G1_R2_00001 Panjit International Inc.

Description: DIODE SIL CARBIDE 650V 10A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 364pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.

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PCDB1065G1_R2_00001 PCDB1065G1_R2_00001 Hersteller : Panjit International Inc. PCDB1065G1.pdf Description: DIODE SIL CARBIDE 650V 10A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PCDB1065G1_R2_00001 Hersteller : PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 40A
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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PCDB1065G1_R2_00001 PCDB1065G1_R2_00001 Hersteller : Panjit PCDB1065G1.pdf SiC Schottky Diodes 650V SiC Schottky Barrier Diode
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PCDB1065G1-R2-00001 PCDB1065G1-R2-00001 Hersteller : Panjit Schottky Diodes & Rectifiers TO-263/SKY/TO/SIC-100DWH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCDB1065G1_R2_00001 Hersteller : PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1.8V
Load current: 10A
Max. load current: 40A
Max. forward impulse current: 0.55kA
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH