PCDB20120G1_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1200V 20A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.74 EUR |
| 10+ | 15.77 EUR |
| 100+ | 11.84 EUR |
Produktrezensionen
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Technische Details PCDB20120G1_R2_00001 Panjit International Inc.
Description: DIODE SIL CARB 1200V 20A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1040pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.
Weitere Produktangebote PCDB20120G1_R2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PCDB20120G1_R2_00001 | Panjit International Inc. |
Description: DIODE SIL CARB 1200V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1040pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PCDB20120G1_R2_00001 | Panjit |
Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PCDB20120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape Mounting: SMD Max. forward impulse current: 960A Max. forward voltage: 2V Power dissipation: 267.9W Technology: SiC Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 152A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 180µA Case: TO263 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PCDB20120G1_R2_00001 |
|
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1200V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Description: DIODE SIL CARB 1200V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCDB20120G1_R2_00001 |
|
Hersteller: Panjit
Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode
Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCDB20120G1_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Mounting: SMD
Max. forward impulse current: 960A
Max. forward voltage: 2V
Power dissipation: 267.9W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 152A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 180µA
Case: TO263
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Mounting: SMD
Max. forward impulse current: 960A
Max. forward voltage: 2V
Power dissipation: 267.9W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 152A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 180µA
Case: TO263
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH