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PCDB20120G1_R2_00001

PCDB20120G1_R2_00001 Panjit International Inc.


PCDB20120G1.pdf Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+15.63 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PCDB20120G1_R2_00001 Panjit International Inc.

Description: DIODE SIL CARB 1.2KV 20A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1040pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.

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PCDB20120G1_R2_00001 PCDB20120G1_R2_00001 Hersteller : Panjit International Inc. PCDB20120G1.pdf Description: DIODE SIL CARB 1.2KV 20A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1040pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.76 EUR
10+20.91 EUR
100+17.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PCDB20120G1_R2_00001 Hersteller : PanJit Semiconductor PCDB20120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Power dissipation: 267.9W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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PCDB20120G1_R2_00001 PCDB20120G1_R2_00001 Hersteller : Panjit PCDB20120G1-2891594.pdf Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode
Produkt ist nicht verfügbar
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PCDB20120G1_R2_00001 Hersteller : PanJit Semiconductor PCDB20120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 960A
Case: TO263
Kind of package: reel; tape
Max. forward voltage: 2V
Max. load current: 152A
Semiconductor structure: single diode
Leakage current: 180µA
Power dissipation: 267.9W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH