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PCDD05120G1_L2_00001

PCDD05120G1_L2_00001 Panjit International Inc.


PCDD05120G1.pdf Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 252pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.78 EUR
Mindestbestellmenge: 3000
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Technische Details PCDD05120G1_L2_00001 Panjit International Inc.

Description: DIODE SIL CARB 1.2KV 5A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 252pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.

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PCDD05120G1_L2_00001 PCDD05120G1_L2_00001 Hersteller : Panjit PCDD05120G1-2853815.pdf Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode
auf Bestellung 4043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.71 EUR
10+ 6.48 EUR
100+ 5.26 EUR
250+ 4.96 EUR
500+ 4.66 EUR
1000+ 4.19 EUR
3000+ 3.75 EUR
PCDD05120G1_L2_00001 PCDD05120G1_L2_00001 Hersteller : Panjit International Inc. PCDD05120G1.pdf Description: DIODE SIL CARB 1.2KV 5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 252pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 3557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.76 EUR
10+ 6.52 EUR
100+ 5.27 EUR
500+ 4.69 EUR
1000+ 4.01 EUR
Mindestbestellmenge: 3
PCDD05120G1_L2_00001 PCDD05120G1_L2_00001 Hersteller : PanJit Semiconductor PCDD05120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PCDD05120G1_L2_00001 PCDD05120G1_L2_00001 Hersteller : PanJit Semiconductor PCDD05120G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
Produkt ist nicht verfügbar