PCDD05120G1_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 1200V SIC SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 252pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 3537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.66 EUR |
| 10+ | 6.43 EUR |
| 100+ | 5.2 EUR |
| 500+ | 4.62 EUR |
| 1000+ | 3.96 EUR |
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Technische Details PCDD05120G1_L2_00001 Panjit International Inc.
Description: 1200V SIC SCHOTTKY BARRIER DIODE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 252pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote PCDD05120G1_L2_00001 nach Preis ab 3.82 EUR bis 9.66 EUR
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PCDD05120G1_L2_00001 | Hersteller : Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDD05120G1_L2_00001 | Hersteller : PanJit Semiconductor |
PCDD05120G1-L2 SMD Schottky diodes |
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PCDD05120G1_L2_00001 | Hersteller : Panjit International Inc. |
Description: 1200V SIC SCHOTTKY BARRIER DIODE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 252pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |