PCDD0665G1_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 650V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 3.79 EUR |
| 100+ | 3.07 EUR |
| 500+ | 2.73 EUR |
| 1000+ | 2.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDD0665G1_L2_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 6A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 228pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote PCDD0665G1_L2_00001 nach Preis ab 2.24 EUR bis 4.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PCDD0665G1_L2_00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| PCDD0665G1_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 64.9W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
PCDD0665G1_L2_00001 | Hersteller : Panjit International Inc. |
Description: DIODE SIL CARB 650V 6A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 228pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| PCDD0665G1_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 64.9W |
Produkt ist nicht verfügbar |