PCDD08120G1_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 418pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
auf Bestellung 2113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.62 EUR |
| 10+ | 5.76 EUR |
| 100+ | 4.14 EUR |
| 500+ | 4.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDD08120G1_L2_00001 Panjit International Inc.
Description: DIODE SIL CARB 1200V 8A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 418pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote PCDD08120G1_L2_00001 nach Preis ab 5.19 EUR bis 11.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDD08120G1_L2_00001 | Hersteller : Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
auf Bestellung 1797 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
PCDD08120G1_L2_00001 | Hersteller : Panjit International Inc. |
Description: DIODE SIL CARB 1200V 8A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 418pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
Produkt ist nicht verfügbar |
