PCDD10120G1_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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Technische Details PCDD10120G1_L2_00001 Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 529pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote PCDD10120G1_L2_00001 nach Preis ab 7.46 EUR bis 16.15 EUR
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PCDD10120G1_L2_00001 | Panjit International Inc. |
Description: DIODE SIL CARB 1.2KV 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 529pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDD10120G1_L2_00001 | Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
auf Bestellung 2165 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PCDD10120G1_L2_00001 |
|
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.16 EUR |
| 10+ | 13.01 EUR |
| 100+ | 10.84 EUR |
| 500+ | 9.56 EUR |
| 1000+ | 8.6 EUR |
| PCDD10120G1_L2_00001 |
|
Hersteller: Panjit
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
auf Bestellung 2165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.15 EUR |
| 10+ | 10.81 EUR |
| 100+ | 8 EUR |
| 500+ | 7.46 EUR |