PCDD10120G1_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 1.2KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 6.78 EUR |
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Technische Details PCDD10120G1_L2_00001 Panjit International Inc.
Description: DIODE SIL CARB 1.2KV 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 529pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote PCDD10120G1_L2_00001 nach Preis ab 6.78 EUR bis 12.74 EUR
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PCDD10120G1_L2_00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode |
auf Bestellung 2958 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDD10120G1_L2_00001 | Hersteller : Panjit International Inc. |
Description: DIODE SIL CARB 1.2KV 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 529pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDD10120G1_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO252AA Kind of package: reel; tape Power dissipation: 200W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| PCDD10120G1_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO252AA Kind of package: reel; tape Power dissipation: 200W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |