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PCDD1065GB_L2_00601

PCDD1065GB_L2_00601 Panjit International Inc.


PCDD1065GB.pdf Hersteller: Panjit International Inc.
Description: 650V/10A IN TO-252AA PACKAGE SIL
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 610pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.15 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details PCDD1065GB_L2_00601 Panjit International Inc.

Description: 650V/10A IN TO-252AA PACKAGE SIL, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 610pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.

Weitere Produktangebote PCDD1065GB_L2_00601 nach Preis ab 4.41 EUR bis 8.54 EUR

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Preis ohne MwSt
PCDD1065GB_L2_00601 PCDD1065GB_L2_00601 Hersteller : Panjit International Inc. PCDD1065GB.pdf Description: 650V/10A IN TO-252AA PACKAGE SIL
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 610pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.54 EUR
10+ 7.16 EUR
100+ 5.8 EUR
500+ 5.15 EUR
1000+ 4.41 EUR
Mindestbestellmenge: 3
PCDD1065GB_L2_00601 Hersteller : PanJit Semiconductor PCDD1065GB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 90W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 36A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 664A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PCDD1065GB_L2_00601 PCDD1065GB_L2_00601 Hersteller : Panjit PCDD1065GB-3394985.pdf Schottky Diodes & Rectifiers 650V/10A Silicon Carbide Schottky Barrier Diode
Produkt ist nicht verfügbar
PCDD1065GB_L2_00601 Hersteller : PanJit Semiconductor PCDD1065GB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 90W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 36A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 664A
Leakage current: 0.1mA
Produkt ist nicht verfügbar