Produkte > PANJIT SEMICONDUCTOR > PCDE1065G1_R2_00001

PCDE1065G1_R2_00001 PanJit Semiconductor


Hersteller: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Anzahl je Verpackung: 800 Stücke
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Technische Details PCDE1065G1_R2_00001 PanJit Semiconductor

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape, Case: TO263, Max. off-state voltage: 650V, Max. load current: 44A, Max. forward voltage: 1.8V, Load current: 10A, Semiconductor structure: single diode, Max. forward impulse current: 0.55kA, Leakage current: 70µA, Power dissipation: 102.7W, Kind of package: reel; tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Anzahl je Verpackung: 800 Stücke.

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PCDE1065G1-R2-00001 Hersteller : Panjit Schottky Diodes & Rectifiers TO-263/SIC/TO/SIC-100DWH
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Im Einkaufswagen  Stück im Wert von  UAH
PCDE1065G1_R2_00001 Hersteller : PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 650V; 10A; reel,tape
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH