PCDF0465G1_T0_00601 Panjit
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.37 EUR |
| 10+ | 2.55 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.25 EUR |
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Technische Details PCDF0465G1_T0_00601 Panjit
Description: DIODE SIL CARB 650V 4A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 160pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote PCDF0465G1_T0_00601 nach Preis ab 2.16 EUR bis 5.42 EUR
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PCDF0465G1_T0_00601 | Hersteller : Panjit International Inc. |
 Description: DIODE SIL CARB 650V 4A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 160pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
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