PCDH40120CCGB_T0_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W
Mounting: THT
Case: TO247-3
Kind of package: tube
Max. load current: 100A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.9V
Type of diode: Schottky rectifying
Technology: SiC
Power dissipation: 443W
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 1.36kA
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W
Mounting: THT
Case: TO247-3
Kind of package: tube
Max. load current: 100A
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.9V
Type of diode: Schottky rectifying
Technology: SiC
Power dissipation: 443W
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 1.36kA
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
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Technische Details PCDH40120CCGB_T0_00601 PanJit Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W, Mounting: THT, Case: TO247-3, Kind of package: tube, Max. load current: 100A, Max. off-state voltage: 1.2kV, Max. forward voltage: 1.9V, Type of diode: Schottky rectifying, Technology: SiC, Power dissipation: 443W, Load current: 20A x2, Semiconductor structure: common cathode; double, Max. forward impulse current: 1.36kA, Leakage current: 0.1mA, Anzahl je Verpackung: 1 Stücke.
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PCDH40120CCGB_T0_00601 | Hersteller : Panjit |
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Produkt ist nicht verfügbar |
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PCDH40120CCGB_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 443W Mounting: THT Case: TO247-3 Kind of package: tube Max. load current: 100A Max. off-state voltage: 1.2kV Max. forward voltage: 1.9V Type of diode: Schottky rectifying Technology: SiC Power dissipation: 443W Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 1.36kA Leakage current: 0.1mA |
Produkt ist nicht verfügbar |