PCDP05120G1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 1200V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 252pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1927 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.86 EUR |
| 50+ | 2.97 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 2.05 EUR |
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Technische Details PCDP05120G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 1200V 5A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 252pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote PCDP05120G1_T0_00001 nach Preis ab 3.43 EUR bis 5.88 EUR
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PCDP05120G1_T0_00001 | Hersteller : Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
auf Bestellung 819 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDP05120G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 2V Load current: 5A Max. load current: 40A Power dissipation: 129.3W Max. forward impulse current: 520A Max. off-state voltage: 1.2kV Technology: SiC |
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