PCDP05120G1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1200V 5A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 252pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 4+ | 5.86 EUR |
| 50+ | 2.97 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 2.05 EUR |
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Technische Details PCDP05120G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 1200V 5A TO220AC, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 252pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote PCDP05120G1_T0_00001 nach Preis ab 3.77 EUR bis 5.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PCDP05120G1_T0_00001 | Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
auf Bestellung 782 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP05120G1_T0_00001 |
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Hersteller: Panjit
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
auf Bestellung 782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.88 EUR |
| 10+ | 3.77 EUR |