PCDP08120G1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 418pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 2+ | 9.12 EUR |
| 50+ | 5.45 EUR |
| 100+ | 5.26 EUR |
| 500+ | 4.52 EUR |
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Technische Details PCDP08120G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 1200V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 418pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote PCDP08120G1_T0_00001 nach Preis ab 5.4 EUR bis 9.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PCDP08120G1_T0_00001 | Panjit |
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP08120G1_T0_00001 |
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Hersteller: Panjit
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.15 EUR |
| 10+ | 5.47 EUR |
| 100+ | 5.4 EUR |